Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer

被引：2

作者：

Su Shao-Jian ^{[1
]}

Han Gen-Quan ^{[2
]}

Zhang Dong-Liang ^{[3
]}

Zhang Guang-Ze ^{[3
]}

Xue Chun-Lai ^{[3
]}

Wang Qi-Ming ^{[3
]}

Cheng Bu-Wen ^{[3
]}

机构：

[1] Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Peoples R China

[2] Chongqing Univ, Coll Optoelect Engn, Educ Minist China, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2013年 / 30卷 / 11期

基金：

中国国家自然科学基金;

关键词：

ELECTRICAL-ACTIVITY; DISLOCATIONS; TECHNOLOGY; MOBILITY; IMPLANT; MOSFETS; SI;

D O I：

10.1088/0256-307X/30/11/118501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Germanium-tin (Ge-1 Sn-x(x)) p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) were fabricated using a strained Ge0.985Sn0.015 thin film that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer layer. The Ge buffer was deposited using a two-step chemical vapor deposition growth technique. The high quality Ge0.985Sn0.015 layer was grown by solid source molecular beam epitaxy. Ge0.985Sn0.015 pMOSFETs with Si surface passivation, TaN/HfO2 gate stack, and nickel stanogermanide [Ni(Ge-1-Sn-x(x))] source/drain were fabricated on the grown substrate. The device achieves an effective hole mobility of 182 cm(2)/V.s at an inversion carrier density of 1 x 10(13) cm(-2).

引用

页数：4

共 50 条

[31] Effects of Substrate Bias on Low-Frequency Noise in Lateral Bipolar Transistors Fabricated on Silicon-on-Insulator Substrate
Hu, Qitao
Chen, Si
Zhang, Shi-Li
Solomon, Paul
Zhang, Zhen
IEEE ELECTRON DEVICE LETTERS, 2020, 41 (01) : 4 - 7
[32] Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer
Loh, T. H.
Nguyen, H. S.
Murthy, R.
Yu, M. B.
Loh, W. Y.
Lo, G. Q.
Balasubramanian, N.
Kwong, D. L.
Wang, J.
Lee, S. J.
APPLIED PHYSICS LETTERS, 2007, 91 (07)
[33] Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth
Shimura, Takayoshi
Ogiwara, Shimpei
Yoshimoto, Chiaki
Hosoi, Takuji
Watanabe, Heiji
APPLIED PHYSICS EXPRESS, 2010, 3 (10)
[34] Microwave Characteristics of Ge n-i-p waveguide photodetectors on Silicon-on-Insulator Substrate
Ramaswamy, Anand
Nunoya, Nobuhiro
Yin, Tao
Johansson, Leif A.
Bowers, John E.
2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2, 2009, : 660 - +
[35] Postgrowth annealing effects on photoluminescence from strained GaSb quantum dots grown on silicon-on-insulator substrate
Jo, M
Yasuhara, N
Sugawara, Y
Kawamoto, K
Fukatsu, S
2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2004, : 121 - 123
[36] Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain
Han, Genquan
Wang, Yibo
Liu, Yan
Wang, Hongjuan
Liu, Mingshan
Zhang, Chunfu
Zhang, Jincheng
Cheng, Buwen
Hao, Yue
AIP ADVANCES, 2015, 5 (05)
[37] Over 10GHz lateral silicon photodetector fabricated on silicon-on-insulator substrate by CMOS-compatible process
Li, Gen
Maekita, Kazuaki
Mitsuno, Hiroya
Maruyama, Takeo
Iiyama, Koichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (04)
[38] Single-electron transistors fabricated from a doped-Si film in a silicon-on-insulator substrate
Sakamoto, T
Kawaura, H
Baba, T
APPLIED PHYSICS LETTERS, 1998, 72 (07) : 795 - 796
[39] Novel room temperature photoluminescence of Ge/Si islands in multilayer structure grown on silicon-on-insulator substrate
Li, CB
Cheng, BW
Mao, RW
Zuo, YH
Shi, WH
Huang, CJ
Luo, LP
Yu, JZ
Wang, QM
THIN SOLID FILMS, 2004, 467 (1-2) : 197 - 200
[40] Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate
Balakumar, S.
Tung, C. H.
Lo, G. Q.
Kumar, R.
Balasubramanian, N.
Kwong, D. L.
Fei, Gao
Lee, S. J.
APPLIED PHYSICS LETTERS, 2006, 89 (03)

← 1 2 3 4 5 →