Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer

Germanium-tin (Ge-1 Sn-x(x)) p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) were fabricated using a strained Ge0.985Sn0.015 thin film that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer layer. The Ge buffer was deposited using a two-step chemical vapor deposition growth technique. The high quality Ge0.985Sn0.015 layer was grown by solid source molecular beam epitaxy. Ge0.985Sn0.015 pMOSFETs with Si surface passivation, TaN/HfO2 gate stack, and nickel stanogermanide [Ni(Ge-1-Sn-x(x))] source/drain were fabricated on the grown substrate. The device achieves an effective hole mobility of 182 cm(2)/V.s at an inversion carrier density of 1 x 10(13) cm(-2).