Effects of Substrate Bias on Low-Frequency Noise in Lateral Bipolar Transistors Fabricated on Silicon-on-Insulator Substrate

被引：7

作者：

Hu, Qitao ^{[1
]}

Chen, Si ^{[1
]}

Zhang, Shi-Li ^{[1
]}

Solomon, Paul ^{[2
]}

Zhang, Zhen ^{[1
]}

机构：

[1] Uppsala Univ, Div Solid State Elect, Angstrom Lab, Dept Engn Sci, SE-75121 Uppsala, Sweden

[2] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 01期

基金：

瑞典研究理事会;

关键词：

Lateral bipolar junction transistor; silicon nanowire field-effect transistor; biosensor; substrate bias; current amplification; trapping and detrapping; 1/f noise;

D O I：

10.1109/LED.2019.2953362

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a systematic study of how the substrate bias (V-sub) modulation affects the current-voltage (I-V) characteristics and low-frequency noise (LFN) of lateral bipolar junction transistors (LBJTs) fabricatedon a silicon-on-insulator (SOI) substrate. The current gain (beta) of npn LBJTs at low base voltage can be greatly improved by a positiveVsub as a result of enhanced electron injection into the base near the buried oxide (BOX)/silicon interface. However, an excessive positive V-sub may also adversely affect the LFN performance by amplifying the noise generated as a result of carrier trapping and detrapping at that interface. Our results provide a practical guideline for improving both beta and the overall noise performance when using our LBJT as a local signal amplifier.

引用

页码：4 / 7

页数：4

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