A Sub-100 μW Ku-Band RTD VCO for Extremely Low Power Applications

被引:11
|
作者
Jeong, Yongsik [1 ]
Choi, Sunkyu [1 ]
Yang, Kyounghoon [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Taejon 305701, South Korea
关键词
Heterojunction bipolar transistor (HBT); Ku-band; resonant tunneling diode (RTD); voltage controlled oscillator (VCO); LOW PHASE-NOISE; CMOS VCO; 12; GHZ; HEMT;
D O I
10.1109/LMWC.2009.2027071
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter presents the microwave performance of a sub-100 mu W Ku-band differential-mode resonant tunneling diode (RTD)-based voltage controlled oscillator (VCO) with an extremely low power consumption of 87 mu W using an InP-based RTD/HBT MMIC technology. In order to achieve the extremely low-power Ku-band RTD VCO, the device size of RTD is scaled down to 0.6 x 0.6 mu m(2). The obtained dc power consumption of 87 mu W is found to be only 1/18 of the conventional-type MMIC VCOs reported in the Ku-band. The fabricated RTD VCO has a phase noise of -100.3 dBc/Hz at 1 MHz offset frequency and a tuning range of 140 MHz with the figure-of-merit (FOM) of -194.3 dBc/Hz.
引用
收藏
页码:569 / 571
页数:3
相关论文
共 50 条
  • [41] X-BAND AND KU-BAND PERFORMANCE OF SUB-MICRON GATE GAAS POWER FETS
    AONO, Y
    HIGASHISAKA, A
    OGAWA, T
    HASEGAWA, F
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 147 - 152
  • [42] Ku-Band, 120-W Power Amplifier Using Gallium Nitride FETs
    Sumi, Hitoshi
    Takahashi, Hiroaki
    Soejima, Tomohide
    Mochizuki, Ryo
    2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, : 1389 - +
  • [43] A Hybrid 50-W GaN-HEMT Ku-Band Power Amplifier
    Rautschke, Felix
    Maassen, Daniel
    Ohnimust, Florian
    Sehenk, Lothar
    Dalisda, Uwe
    Boeck, Georg
    2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2016, : 1079 - 1082
  • [44] 70 W GaN-HEMT Ku-Band Power Amplifier in MIC Technology
    Maassen, Daniel
    Rautschke, Felix
    Ohnimus, Florian
    Schenk, Lothar
    Dalisda, Uwe
    Boeck, Georg
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2017, 65 (04) : 1272 - 1283
  • [45] A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate
    Wang Dongfang
    Chen Xiaojuan
    Liu Xinyu
    JOURNAL OF SEMICONDUCTORS, 2010, 31 (02)
  • [46] Design, fabrication and characterising of 100 W GaN HEMT for Ku-band application附视频
    任春江
    钟世昌
    李宇超
    李忠辉
    孔月婵
    陈堂胜
    Journal of Semiconductors, 2016, (08) : 53 - 58
  • [47] Low Actuation Voltage Capacitive RF MEMS Switch For Ku-band applications
    Mahesh, A.
    2014 INTERNATIONAL CONFERENCE FOR CONVERGENCE OF TECHNOLOGY (I2CT), 2014,
  • [48] A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate
    王东方
    陈晓娟
    刘新宇
    半导体学报, 2010, 31 (02) : 5 - 6
  • [49] Ku-band 15W single-chip HJFET power amplifier
    Matsunaga, K
    Okamoto, Y
    Miura, I
    Kuzuhara, M
    1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 697 - 700
  • [50] A Ku-Band 40W GaN Power Amplifier MMIC for Satellite Communication
    Zhu, Shiquan
    Liu, Yujie
    Xiao, Zhilong
    Huang, Lei
    Wu, Qingzhi
    Mao, Shuman
    Wang, Huanpeng
    Xu, Yuehang
    2022 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS, IMWS-AMP, 2022,