A Sub-100 μW Ku-Band RTD VCO for Extremely Low Power Applications

被引:11
|
作者
Jeong, Yongsik [1 ]
Choi, Sunkyu [1 ]
Yang, Kyounghoon [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Taejon 305701, South Korea
关键词
Heterojunction bipolar transistor (HBT); Ku-band; resonant tunneling diode (RTD); voltage controlled oscillator (VCO); LOW PHASE-NOISE; CMOS VCO; 12; GHZ; HEMT;
D O I
10.1109/LMWC.2009.2027071
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter presents the microwave performance of a sub-100 mu W Ku-band differential-mode resonant tunneling diode (RTD)-based voltage controlled oscillator (VCO) with an extremely low power consumption of 87 mu W using an InP-based RTD/HBT MMIC technology. In order to achieve the extremely low-power Ku-band RTD VCO, the device size of RTD is scaled down to 0.6 x 0.6 mu m(2). The obtained dc power consumption of 87 mu W is found to be only 1/18 of the conventional-type MMIC VCOs reported in the Ku-band. The fabricated RTD VCO has a phase noise of -100.3 dBc/Hz at 1 MHz offset frequency and a tuning range of 140 MHz with the figure-of-merit (FOM) of -194.3 dBc/Hz.
引用
收藏
页码:569 / 571
页数:3
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