AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

被引：14

作者：

Storm, David F. ^{[1
]}

Growden, Tyler A. ^{[2
]}

Zhang, Weidong ^{[3
]}

Brown, Elliott R. ^{[3
]}

Nepal, Neeraj ^{[1
]}

Katzer, D. Scott ^{[1
]}

Hardy, Matthew T. ^{[1
]}

Berger, Paul R. ^{[2
]}

Meyer, David J. ^{[1
]}

机构：

[1] US Naval Res Lab, Elect Sci & Technol Div, Code 6852, 4555 Overlook Ave SW, Washington, DC 20375 USA

[2] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[3] Wright State Univ, Dept Phys & Elect Engn, Dayton, OH 45435 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2017年 / 35卷 / 02期

关键词：

ALGAN/GAN HEMTS; HETEROSTRUCTURES; DENSITY;

D O I：

10.1116/1.4977779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the growth by rf-plasma assisted molecular beam epitaxy of AlN/GaN/AlN resonant tunneling diodes which exhibit stable, repeatable, and hysteresis-free negative differential resistance (NDR) at room temperature for more than 1000 bias sweeps between -2.5 and +5.5 V. The device layers were grown on freestanding, Ga-polar GaN substrates grown by hydride vapor phase epitaxy and having a density of threading dislocations between 10(6) and 10(7) cm(-2). The authors speculate that the repeatable NDR is facilitated by the low-dislocation density substrates.

引用

页数：4

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