Bidirectional negative differential resistance in AlN/GaN resonant tunneling diodes grown on freestanding GaN

被引：4
|
作者：
Qiu, Haibing [1 ,2 ]
Zhou, Xiangpeng [2 ,3 ]
Yang, Wenxian [2 ]
Zhang, Xue [1 ,2 ]
Jin, Shan [2 ]
Lu, Shulong [2 ]
Qin, Hua [2 ]
Bian, Lifeng [1 ,2 ]
机构：
[1] Univ Sci & Technol China, Sch Nanotech & Nanobion, Hefei 230026, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
[3] Univ Sci & Technol China, Sch Microelect, Hefei 230026, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2021年 / 119卷 / 06期
基金：
中国国家自然科学基金;
关键词：
30;
D O I：
10.1063/5.0061872
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, we report bidirectional negative differential resistance (NDR) in Al(Ga)N/GaN/AlN resonant tunneling diodes grown on free-standing GaN substrates by RF-plasma assisted molecular beam epitaxy. Bidirectional NDR has exhibited a current-voltage (I-V) characteristic in both forward and reverse biases at room temperature. The positive peak current density is 160 kA/cm(2) with a peak to valley current ratio (PVCR) of 1.34, and the negative peak current density is 112 kA/cm(2) with a high PVCR of 1.56. The bidirectional NDR is attributed to the change in the polarization field in the active region, which is caused by the asymmetric barrier component.
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页数：6
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