Bidirectional negative differential resistance in AlN/GaN resonant tunneling diodes grown on freestanding GaN

被引：4

作者：

Qiu, Haibing ^{[1
,2
]}

Zhou, Xiangpeng ^{[2
,3
]}

Yang, Wenxian ^{[2
]}

Zhang, Xue ^{[1
,2
]}

Jin, Shan ^{[2
]}

Lu, Shulong ^{[2
]}

Qin, Hua ^{[2
]}

Bian, Lifeng ^{[1
,2
]}

机构：

[1] Univ Sci & Technol China, Sch Nanotech & Nanobion, Hefei 230026, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

[3] Univ Sci & Technol China, Sch Microelect, Hefei 230026, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2021年 / 119卷 / 06期

基金：

中国国家自然科学基金;

关键词：

30;

D O I：

10.1063/5.0061872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report bidirectional negative differential resistance (NDR) in Al(Ga)N/GaN/AlN resonant tunneling diodes grown on free-standing GaN substrates by RF-plasma assisted molecular beam epitaxy. Bidirectional NDR has exhibited a current-voltage (I-V) characteristic in both forward and reverse biases at room temperature. The positive peak current density is 160 kA/cm(2) with a peak to valley current ratio (PVCR) of 1.34, and the negative peak current density is 112 kA/cm(2) with a high PVCR of 1.56. The bidirectional NDR is attributed to the change in the polarization field in the active region, which is caused by the asymmetric barrier component.

引用

页数：6

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