Negative Differential Resistance in Planar Graphene Quantum Dot Resonant Tunneling Diodes

被引：0

作者：

Al-Dirini, Feras ^{[1
,2
]}

Mohammed, Mahmood A. ^{[3
]}

Jiang, Liming ^{[1
,2
]}

Hossain, Sharafat ^{[1
,2
]}

Nasr, Babak ^{[1
,2
]}

Hossain, Faruque ^{[1
,2
]}

Nirmalathas, Ampalavanapillai ^{[1
]}

Skafidas, Efstratios ^{[1
,2
]}

机构：

[1] Univ Melbourne, Dept Elect & Elect Engn, Parkville, Vic 3010, Australia

[2] Univ Melbourne, Ctr Neural Engn, Parkville, Vic 3010, Australia

[3] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 0E9, Canada

来源：

2017 IEEE 17TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2017年

关键词：

DEVICES; HETEROSTRUCTURES; CONDUCTANCE; ENERGY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Negative differential resistance (NDR), an electronic property present in resonant tunneling diodes, enables high performance terahertz frequency oscillators and multi-state logic and memory devices. An important measure of NDR is the peak-to-valley current ratio (PVCR) and this has been extremely lacking in solid-state NDR devices. Here we show how a dimensional mismatch between the quantum dot and the electrodes of a planar graphene Double Barrier Resonant Tunneling Diode (DB-RTD) greatly enhances the PVCR of the device up to a ratio of 10(3). Our findings suggest a promising future for the application of planar graphene quantum dot devices in next generation electronics.

引用

页码：965 / 968

页数：4

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