Measured negative differential resistivity for GaN Gunn diodes on GaN substrate

被引：35
|
作者：
Yilmazoglu, O. [1 ]
Mutamba, K. [1 ]
Pavlidis, D. [1 ]
Karaduman, T. [1 ]
机构：
[1] Tech Univ Darmstadt, Dept High Frequency Elect, D-64283 Darmstadt, Germany
来源：
ELECTRONICS LETTERS | 2007年 / 43卷 / 08期
关键词：
D O I：
10.1049/el:20070658
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Current-voltage characteristics obtained by pulse-biasing GaN Gunn diodes on GaN substrate showed a wide negative differential resistance (NDR) region. Electrical fields of up to twice the threshold value did not lead to any electromigration effects from the contacts. The electron drift-velocity (VD) was estimated to be 1.9 x 10(7) cm/s. This represents the first demonstration of a stable NDR with a vertical GaN-based Gunn device.
引用
收藏
页码：480 / 482
页数：3
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