Calculation of nonlinear microwave conductivity of GaN gunn diodes

被引：0
|
作者：
Malyshev, VA [1 ]
Fil, KA [1 ]
机构：
[1] Taganrog State Univ Radio Engn, Taganrog 347928, Russia
来源：
11TH INTERNATIONAL CONFERENCE MICROWAVE & TELECOMMUNICATION TECHNOLOGY, CONFERENCE PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/CRMICO.2001.961513
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Calculated in the present work are the dependences of components of GaN diodes microwave conductivity on the frequency in terahertz waveband, using the method, stated in [1].
引用
收藏
页码：166 / 166
页数：1
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