Improvement of electrical property and surface morphology of GaN grown by RF-plasma assisted molecular beam epitaxy by introduction of multiple AlN intermediate layer

被引：18
|
作者：
Kikuchi, A [1 ]
Yamada, T [1 ]
Nakamura, S [1 ]
Kusakabe, K [1 ]
Sugihara, D [1 ]
Kishino, K [1 ]
机构：
[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期
关键词：
GaN; AlN; molecular beam epitaxy; polarity; intermediate layer; threading dislocation;
D O I：
10.1016/S0921-5107(00)00762-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The crystal properties of Ga-polarity GaN layers grown by molecular beam epitaxy using RF-plasma nitrogen on (0001) Al2O3 substrates were remarkably improved by introduction of high-temperature grown AlN multiple intermediate layers (HT-AlN-MILs). The effects of HT-AlN-MIL on the improvement of crystal quality were found to be different for its thickness. The 8 nm-thick HT-AlN-MIL improved the electrical property and the 2 nm-thick HT-AlN-MIL improved the surface morphology. The combination of 8 nm- and 2 nm-thick HT-AlN-MILs brought about improvement of both electrical property and surface morphology, concurrently. The HT-AlN-MIL was used for RF-MBE re-growth on MOCVD-GaN template. Relatively tine step flow structure without spiral hillocks was obtained. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：12 / 15
页数：4
相关论文
共 50 条
  • [1] AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN
    Storm, David F.
    Growden, Tyler A.
    Zhang, Weidong
    Brown, Elliott R.
    Nepal, Neeraj
    Katzer, D. Scott
    Hardy, Matthew T.
    Berger, Paul R.
    Meyer, David J.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (02):
  • [2] Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy
    Fong, WK
    Zhu, CF
    Leung, BH
    Surya, C
    Sundaravel, B
    Luo, EZ
    Xu, JB
    Wilson, IH
    [J]. MICROELECTRONICS RELIABILITY, 2002, 42 (08) : 1179 - 1184
  • [3] Thermal activation of beryllium in GaN grown by rf-plasma molecular beam epitaxy
    VanMil, BL
    Lee, K
    Wang, LJ
    Giles, NC
    Myers, TH
    [J]. GAN AND RELATED ALLOYS - 2003, 2003, 798 : 503 - 508
  • [4] Intersubband absorption at λ ∼ 1.2-1.6 μm in GaN/AlN multiple quantum wells grown by rf-plasma molecular beam epitaxy
    Kishino, K
    Kikuchi, A
    Kanazawa, H
    Tachibana, T
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2002, 192 (01): : 124 - 128
  • [5] Surface morphology of GaN layer grown by plasma-assisted molecular beam epitaxy on MOCVD-grown GaN template
    Ide, T
    Shimizu, M
    Kuo, J
    Jeganathan, K
    Shen, XQ
    Okumura, H
    [J]. 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2549 - 2552
  • [6] Quasi-free standing GaN epitaxial layer grown on nano-columnar GaN by RF-plasma assisted molecular beam epitaxy
    Kusakabe, K
    Yamada, T
    Toyoura, Y
    Bannai, R
    Kikuchi, A
    Kishino, K
    [J]. 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 473 - 478
  • [7] Improvement of crystal quality of rf-plasma-assisted molecular beam epitaxy grown Ga-polarity GaN by high-temperature grown AlN multiple intermediate layers
    Kikuchi, A
    Yamada, T
    Nakamura, S
    Kusakabe, K
    Sugihara, D
    Kishino, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (4B): : L330 - L333
  • [8] High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy
    Stemmer, J
    Fedler, F
    Klausing, H
    Mistele, D
    Rotter, T
    Semchinova, O
    Aderhold, J
    Sanchez, AM
    Pacheco, FJ
    Molina, SI
    Fehrer, M
    Hommel, D
    Graul, J
    [J]. JOURNAL OF CRYSTAL GROWTH, 2000, 216 (1-4) : 15 - 20
  • [9] Structural, optical and electrical properties of n-type GaN on Si (111) grown by RF-plasma assisted molecular beam epitaxy
    Chin, C. W.
    Hassan, Z.
    Yam, F. K.
    [J]. CURRENT ISSUES OF PHYSICS IN MALAYSIA, 2008, 1017 : 358 - 362
  • [10] Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy
    Storm, D. F.
    Meyer, D. J.
    Katzer, D. S.
    Binari, S. C.
    Paskova, Tanya
    Preble, E. A.
    Evans, K. R.
    Zhou, Lin
    Smith, David J.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (02):
12345