A 2.8-W Q-band high-efficiency power amplifier

被引:10
|
作者
Aust, Michael V. [1 ]
Sharma, Arvind K. [1 ]
Fordham, Owen [1 ]
Grundbacher, Ronald [1 ]
To, Richard [1 ]
Tsai, Roger S. [1 ]
Lai, Richard [1 ]
机构
[1] Northrop Grumman, Adv Technol Dept, MMIC Design Teams, Redondo Beach, CA 90278 USA
关键词
HEMT; millimeter wave amplifier; MMIC power amplifier; MODFET; power combining;
D O I
10.1109/JSSC.2006.878102
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A highly efficient and high-power monolithic power amplifier operating at Q-band is presented utilizing 0.15-mu m pseudomorphic InGaAs/GaAs HEMT production process on 2-mil-thick substrate. Over 42-46 GHz frequency range, the amplifier demonstrated maximum power of 2.8 W (34.5 dBm) and power-added efficiency (PAE) of 23% to 26% when operated at 5 V and 250 mA/mm. The amplifier attained maximum PAE of 24% to 29% and power of 33.6-34 dBm when biased at 5 V and 125 mA/mm. At these power levels and PAEs, the amplifier exhibited power densities in excess of 430 mW/mm. With device periphery ratio of 1:2.857, effective phase compensation of the input feed network, and low-loss output-combining network, the power amplifier has been able to attain state-of-the-art efficiency and power performance.
引用
收藏
页码:2241 / 2247
页数:7
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