A 65-W High-Efficiency UHF GaN Power Amplifier

被引：6

作者：

Lopez, Nestor D. ^{[1
]}

Hoversten, John ^{[1
]}

Poulton, Matthew ^{[2
]}

Popovic, Zoya ^{[1
]}

机构：

[1] Univ Colorado, Dept Elect & Comp Engn, Boulder, CO 80309 USA

[2] RF Micro Devices, Charlotte, NC 28269 USA

来源：

2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 2008年

关键词：

GaN HEMT; High-Efficiency; Class-E; UHF; Power Amplifiers;

D O I：

10.1109/MWSYM.2008.4633104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a high-efficiency UHF power amplifier (PA) using a GaN HEMT on a SiC substrate transistor as the active device. The PA delivers 65 W with 82% power added efficiency (PAE), and 45 W with 84% PAE at 370 MHz, with supply voltages of 35 V and 28 V, respectively. Load pull techniques under Class-E conditions are used for device characterization and matching network design. The PA is implemented in a hybrid circuit with mixed lumped-element and transmission-line matching networks. A weighted Euclidean distance is defined to enable tradeoff studies between output power (POUT) and efficiency, in order to find the final optimal amplifier design.

引用

页码：65 / +

页数：2

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