A 100W Decade Bandwidth, High-Efficiency GaN Amplifier

被引：0
|
作者：
Custer, James [1 ]
Walker, John [2 ]
机构：
[1] Integra Technol Inc, 5072 Hillsdale Circle 120, El Dorado Hills, CA 95762 USA
[2] Integra Technol Inc, El Segundo, CA 90245 USA
来源：
2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2014年
关键词：
Transistor; GaN; Amplifier; High-Efficiency;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper will report a 100W, 100MHz to 1GHz GaN amplifier module having a minimum efficiency of 48% across the whole band with a minimum gain of 14dB. This is believed to be the highest power/efficiency combination yet reported for this frequency range.
引用
收藏
页码：1484 / 1487
页数：4
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