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A Nested-Reactance Feedback Power Amplifier for Q-Band Applications

被引：7
|
作者：
Kalantari, Nader [1 ]
Buckwalter, James F. [1 ]
机构：
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2012年 / 60卷 / 06期
基金：
美国国家科学基金会;
关键词：
Power-added efficiency (PAE); power amplifier (PA); silicon-germanium (SiGe);
D O I：
10.1109/TMTT.2012.2190751
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A power amplifier (PA) topology is presented that incorporates a feedback network around the transistor to satisfy matching requirements. Circuit parameters can be tuned for small-and large-signal circuit operation. The PA is fabricated in a 120-nm SiGe BiCMOS process and performs from 36 to 41 GHz. The PA achieves a saturated output power of 23 dBm and a peak power-added efficiency of 20% at 38 GHz. This is the highest reported output power from a single PA at Q-band in silicon.
引用
收藏
页码：1667 / 1675
页数：9
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