A 2.8-W Q-band high-efficiency power amplifier

被引：10
|
作者：
Aust, Michael V. [1 ]
Sharma, Arvind K. [1 ]
Fordham, Owen [1 ]
Grundbacher, Ronald [1 ]
To, Richard [1 ]
Tsai, Roger S. [1 ]
Lai, Richard [1 ]
机构：
[1] Northrop Grumman, Adv Technol Dept, MMIC Design Teams, Redondo Beach, CA 90278 USA
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2006年 / 41卷 / 10期
关键词：
HEMT; millimeter wave amplifier; MMIC power amplifier; MODFET; power combining;
D O I：
10.1109/JSSC.2006.878102
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A highly efficient and high-power monolithic power amplifier operating at Q-band is presented utilizing 0.15-mu m pseudomorphic InGaAs/GaAs HEMT production process on 2-mil-thick substrate. Over 42-46 GHz frequency range, the amplifier demonstrated maximum power of 2.8 W (34.5 dBm) and power-added efficiency (PAE) of 23% to 26% when operated at 5 V and 250 mA/mm. The amplifier attained maximum PAE of 24% to 29% and power of 33.6-34 dBm when biased at 5 V and 125 mA/mm. At these power levels and PAEs, the amplifier exhibited power densities in excess of 430 mW/mm. With device periphery ratio of 1:2.857, effective phase compensation of the input feed network, and low-loss output-combining network, the power amplifier has been able to attain state-of-the-art efficiency and power performance.
引用
收藏
页码：2241 / 2247
页数：7
相关论文
共 50 条
  • [1] A 1-W HIGH-EFFICIENCY Q-BAND MMIC POWER-AMPLIFIER
    CHI, JCL
    LESTER, JA
    HWANG, Y
    CHOW, PD
    HUANG, MY
    [J]. IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1995, 5 (01): : 21 - 23
  • [2] High-efficiency InP-based HEMT MMIC power amplifier for Q-band applications
    Lam, W.
    Matloubian, M.
    Kurdoghlian, A.
    Larson, L.
    Igawa, A.
    Chou, C.
    Jelloian, L.
    Brown, A.
    Thompson, M.
    Ngo, C.
    [J]. IEEE Microwave and Guided Wave Letters, 1993, 3 (11): : 420 - 422
  • [3] Q-BAND HIGH-EFFICIENCY MONOLITHIC HEMT POWER PREMATCH STRUCTURES
    KASODY, R
    WANG, H
    BIEDENBENDER, M
    CALLEJO, L
    DOW, GS
    ALLEN, BR
    [J]. ELECTRONICS LETTERS, 1995, 31 (06) : 505 - 506
  • [4] Fully-matched, high-efficiency Q-band 1 watt MMIC solid state power amplifier
    Hwang, Y
    Chow, PD
    Lester, J
    Chi, J
    Garske, D
    Biedenbender, M
    Lai, R
    [J]. MONOLITHIC CIRCUITS SYMPOSIUM, DIGEST OF PAPERS, 1996, : 167 - 170
  • [5] Fully-matched, high-efficiency Q-band 1 watt MMIC solid state power amplifier
    Hwang, Y
    Chow, PD
    Lester, J
    Chi, J
    Garske, D
    Biedenbender, M
    Lai, R
    [J]. 1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 149 - 152
  • [6] HIGH-EFFICIENCY Q-BAND GAAS-FET OSCILLATOR
    TSERNG, HQ
    KIM, B
    [J]. ELECTRONICS LETTERS, 1984, 20 (07) : 297 - 298
  • [7] Design and Performance of a High-Efficiency 120-W Q-Band Space Helix TWT
    Cao, Linlin
    He, Jun
    Huang, Mingguang
    Zhang, Xiaohan
    Zhao, Jiandong
    Zhai, Dehui
    [J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 2020, 48 (03) : 658 - 664
  • [8] Wide Band High-Efficiency Power Amplifier Design
    AlMuhaisen, Abdullah
    Lees, J.
    Cripps, Steve C.
    Tasker, P. J.
    Benedikt, J.
    [J]. 2011 6TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE, 2011, : 184 - 187
  • [9] Q-band Linear Power Amplifier for Backhaul Application
    Sun, Hong-lei
    Zhu, Xiao-wei
    Yu, Chao
    Wang, Xiang
    [J]. 2016 IEEE INTERNATIONAL CONFERENCE ON UBIQUITOUS WIRELESS BROADBAND (ICUWB2016), 2016,
  • [10] A Q-band/W-band Dual -band Power Amplifier in 0.12 μm SiGe BiCMOS Process
    Wu, Po-Yi
    Buckwalter, James F.
    [J]. 2013 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS, 2013,
12345