Q-BAND HIGH-EFFICIENCY MONOLITHIC HEMT POWER PREMATCH STRUCTURES

被引：0
|
作者：
KASODY, R
WANG, H
BIEDENBENDER, M
CALLEJO, L
DOW, GS
ALLEN, BR
机构：
[1] TRW, Electronic Systems and Technology Division, CA 90278, M5/1041, One Space Park, Redondo Beach
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 06期
关键词：
HIGH-ELECTRON-MOBILITY TRANSISTORS; IMPEDANCE MATCHING;
D O I：
10.1049/el:19950309
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Monolithic Q-band high-efficiency prematch structures using 0.15 mu m double-heterostructure pseudomorphic AlGaAs/InGaAs/GaAs HEMTs have been designed, fabricated and evaluated. The structures include a 400 mu m and an 800 mu m gate-width unit, demonstrating power-added efficiency of 41.6% and 37%, respectively, which represents state-of-the-art efficiency performance at this frequency. These building blocks can be used easily to construct high-power, high-efficiency amplifiers. The circuit design, output power and efficiency performance of the prematch structures are also presented.
引用
收藏
页码：505 / 506
页数：2
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