A 1.3/2.8 GHz high efficiency dual-band GAN power amplifier

被引:0
|
作者
Zhu Difei [1 ]
Zhong Shichang [1 ]
机构
[1] Nanjing Elect Device Inst, Nanjing 210016, Jiangsu, Peoples R China
关键词
dual band; GaN HEMT; high efficiency; high power; power amplifier;
D O I
10.1109/ieee-iws.2019.8804054
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 1.3/2.8 GHz high efficiency dual-band GAN power amplifier was designed and realized. An impedance matching network of the dual band amplifier at the fundamental and second harmonic frequencies is constructed to reduce the impedance variation with frequency fluctuations. The input matching network is composed of three stages of transmission line. The output matching network is composed of a three-stage transmission line and an open-ended sub. A T-type DC bias line is used. The test results show that at drain voltage of 48V and input pulse width of 0.1ms with a duty cycle of 10%, the power amplifier exhibits an output power more than 49.5 dBm, a power gain over 10 dB and a maximum drain efficiency of 68.5% at 1.3GHz, and an output power more than 49.6 dBm, a power gain over 10dB and a maximum drain efficiency of 73% at 2.8GHz. At present, there are few reports related to high-power dual-band power amplifiers at home and abroad. The PA has a high output power and drain efficiency, and the technology has reference value for the designs of other related PAs.
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页数:3
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