A 2.1/2.6 GHz Dual-Band High-Efficiency GaN HEMT Amplifier with Harmonic Reactive Terminations

被引：0
|
作者：
Enomoto, Jun [1 ]
Ishikawa, Ryo [1 ]
Honjo, Kazuhiko [1 ]
机构：
[1] Univ Electrocommun, 1-5-1 Chofu Gaoka, Chofu, Tokyo 1828585, Japan
来源：
2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2014年
关键词：
Power amplifier; dual-band; high efficiency; GaN HEMT; reactive termination; POWER-AMPLIFIER; NETWORK;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A dual-band high-efficiency GaN HEMT amplifier with harmonic reactive source and load impedances has been developed at the 2.1-GHz and 2.6-GHz bands. Many circuit components are required for this type of amplifier, since many frequencies have to be treated, which induces circuit loss. Here, a design strategy to avoid an efficiency reduction due to circuit loss is introduced. The fabricated dual-band GaN HEMT amplifier has achieved maximum power-added efficiencies (PAEs) of 72% and 61% with 36.7- and 37.1-dBm output powers at 2.13 and 2.6 GHz, respectively.
引用
收藏
页码：1488 / 1491
页数：4
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