A 2.1/2.6 GHz Dual-Band High-Efficiency GaN HEMT Amplifier with Harmonic Reactive Terminations

被引：0
|
作者：
Enomoto, Jun [1 ]
Ishikawa, Ryo [1 ]
Honjo, Kazuhiko [1 ]
机构：
[1] Univ Electrocommun, 1-5-1 Chofu Gaoka, Chofu, Tokyo 1828585, Japan
来源：
2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2014年
关键词：
Power amplifier; dual-band; high efficiency; GaN HEMT; reactive termination; POWER-AMPLIFIER; NETWORK;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A dual-band high-efficiency GaN HEMT amplifier with harmonic reactive source and load impedances has been developed at the 2.1-GHz and 2.6-GHz bands. Many circuit components are required for this type of amplifier, since many frequencies have to be treated, which induces circuit loss. Here, a design strategy to avoid an efficiency reduction due to circuit loss is introduced. The fabricated dual-band GaN HEMT amplifier has achieved maximum power-added efficiencies (PAEs) of 72% and 61% with 36.7- and 37.1-dBm output powers at 2.13 and 2.6 GHz, respectively.
引用
收藏
页码：1488 / 1491
页数：4
相关论文
共 50 条
  • [31] High-Efficiency GaN-HEMT Class-F Amplifier Operating at 5.7 GHz
    Kuroda, Kenta
    Ishikawa, Ryo
    Honjo, Kazuhiko
    [J]. 2008 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, 2008, : 445 - 448
  • [32] Design of a Concurrent Dual-Band 1.8-2.4-GHz GaN-HEMT Doherty Power Amplifier
    Saad, Paul
    Colantonio, Paolo
    Piazzon, Luca
    Giannini, Franco
    Andersson, Kristoffer
    Fager, Christian
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (06) : 1840 - 1849
  • [33] Design of a High-efficiency GaN HEMT RF Power Amplifier
    Wang, Yelin
    Larsen, Torben
    [J]. 2015 INTERNATIONAL SYMPOSIUM ON SIGNALS, CIRCUITS AND SYSTEMS (ISSCS), 2015,
  • [34] 4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching
    Mashimo, Kazuki
    Ishikawa, Ryo
    Honjo, Kazuhiko
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 2018, E101C (10): : 751 - 758
  • [35] Design of A High-efficiency Dual-band Harmonic tuned Power Amplifier via Simplified Real Frequency Technique
    Ma, Liang
    Zhou, Jianyi
    Yu, Zhiqiang
    [J]. 2015 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), VOLS 1-3, 2015,
  • [36] High-Efficiency Dual-Band Power Amplifier Based on High-Selectivity Suspended Substrate Stripline Dual-Band Filter
    Peng, Xiwen
    Xie, Zeming
    [J]. 2019 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2019), 2019,
  • [37] 5.65 GHz High-Efficiency GaN HEMT Power Amplifier With Harmonics Treatment up to Fourth Order
    Kamiyama, Masahiro
    Ishikawa, Ryo
    Honjo, Kazuhiko
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2012, 22 (06) : 315 - 317
  • [38] High-efficiency broadband GaN HEMT power amplifier based on harmonic-tuned matching approach
    Liu, Guohua
    Li, Sudong
    Cheng, Zhiqun
    Feng, Han
    Dong, Zhihua
    [J]. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2020, 30 (02)
  • [39] A Compact 12-Watt High-Efficiency 2.1-2.7 GHz Class-E GaN HEMT Power Amplifier for Base Stations
    van der Heijden, Mark P.
    Acar, Mustafa
    Vromans, Jan S.
    [J]. 2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, : 657 - 660
  • [40] A C-Band High-Efficiency Power Amplifier MMIC With Second-Harmonic Control in 0.25 μm GaN HEMT Technology
    Xie, Heng
    Cheng, Yu Jian
    Ding, Yan Ran
    Wang, Lei
    Fan, Yong
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2021, 31 (12) : 1303 - 1306
12345