4.5-/4.9-GHz-Band Tunable High-Efficiency GaN HEMT Power Amplifier

被引：0
|
作者：
Mashimo, Kazuki [1 ]
Ishikawa, Ryo [1 ]
Honjo, Kazuhiko [1 ]
机构：
[1] Univ Electrocommun, Chofu, Tokyo, Japan
来源：
2017 47TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2017年
关键词：
Power amplifier; high efficiency; tuneable; GaN HEMT; NETWORK; GHZ;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 4.5-4.9-GHz-band tuneable high-efficiency GaN HEMT power amplifier has been developed to meet the demand for high-speed data-rate wireless communication systems. By applying one-eighth-wavelength, closely spaced, parallel, open-ended stubs to set a short condition at a mid second-order harmonic frequency, and by switching its condition between connected and non-connected states to change the reactance at each fundamental frequency in the amplifier output circuit, a high-efficiency operation band was successfully shifted. As a first step, the connected/non-connected state was created with bonding wires. The fabricated GaN HEMT amplifier exhibited a maximum power-added efficiency of 62% and 66%, a maximum drain efficiency of 66% and 70%, and a saturation output power of 38 dBm at 4.66 and 4.92 GHz, respectively, for each switched condition.
引用
收藏
页码：460 / 463
页数：4
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