HIGH FREQUENCY CHARACTERISATION OF SINGLE INAS NANOWIRE FIELD-EFFECT TRANSISTORS

We report on a first RF characterisation of single InAs nanowire channel field-effect-transistors. The nanowires with about 30 nm diameter are transferred to a carrier substrate and contacted with a coplanar waveguide pad configuration with a pitch down to 50 Am. Magnesium Oxide as well as SiN(x) are used as gate dielectric for high performance MISFET type field-effect-transistors. Small signal scattering parameter measurements have been performed on-wafer. The nanowire FET exhibit an ultra-small intrinsic gate-source capacitance C(gs) down to a few hundred ato Farad, making a careful de-embedding of the data indispensable. First measurements have shown a maximum stable gain higher than 30 dB at low frequency and a maximum oscillation frequency of 15 GHz.