Temperature dependent properties of InSb and InAs nanowire field-effect transistors

被引：67

作者：

Nilsson, Henrik A. ^{[1
]}

Caroff, Philippe ^{[1
]}

Thelander, Claes ^{[1
]}

Lind, Erik ^{[1
]}

Karlstrom, Olov ^{[2
]}

Wernersson, Lars-Erik ^{[1
]}

机构：

[1] Lund Univ, Div Solid State Phys, S-22100 Lund, Sweden

[2] Lund Univ, Div Math Phys, S-22100 Lund, Sweden

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 15期

基金：

瑞典研究理事会;

关键词：

field effect transistors; nanowires; PERFORMANCE;

D O I：

10.1063/1.3402760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.

引用

页数：3

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