Giant Thermovoltage in Single InAs Nanowire Field-Effect Transistors

被引：58

作者：

Roddaro, Stefano ^{[1
,2
,3
]}

Ercolani, Daniele ^{[1
,2
]}

Safeen, Mian Akif ^{[1
,2
]}

Suomalainen, Soile ^{[4
]}

Rossella, Francesco ^{[1
,2
]}

Giazotto, Francesco ^{[1
,2
]}

Sorba, Lucia ^{[1
,2
]}

Beltram, Fabio ^{[1
,2
]}

机构：

[1] Scuola Normale Super Pisa, NEST, I-56127 Pisa, Italy

[2] CNR, Ist Nanosci, I-56127 Pisa, Italy

[3] CNR, Ist Officina Mat, I-34149 Trieste, Italy

[4] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

NANO LETTERS | 2013年 / 13卷 / 08期

基金：

芬兰科学院;

关键词：

Nanowire; Seebeck; field effect; thermoelectric; mobility; hysteresis; QUANTUM DOTS; EFFICIENCY;

D O I：

10.1021/nl401482p

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Millivolt range thermovoltage is demonstrated in single InAs nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias Delta T > 10 K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity sigma between room temperature and 100 K. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices.

引用

页码：3638 / 3642

页数：5

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