Transient program operation model considering distribution of electrons in 3D NAND flash memories

被引：0
|
作者：
Lee, Dong Chan [1 ,2 ]
Shin, Hyungcheol [1 ,2 ]
机构：
[1] Seoul Natl Univ, Interuniv Semicond Res Ctr ISRC, Seoul 151747, South Korea
[2] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151747, South Korea
来源：
IEICE ELECTRONICS EXPRESS | 2020年 / 17卷 / 23期
关键词：
3D NAND flash memory; program operation; electron distribution; transient dynamics; poisson equation; SEMIANALYTICAL MODEL; SI/SIO2; INTERFACE; NORDHEIM;
D O I：
10.1587/elex.17.20200335
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We developed a new compact model for the program operation of 3D NAND Flash memories. A modified 1-D Poisson equation was proposed that shows better accuracy than the existing model by reflecting the spatial distribution of electrons trapped by the program operation. Under various conditions of program voltage (V-PGM) and program time (t(PGM)), the threshold voltage shift (Delta V-t) was extracted by TCAD (Technology Computer-Aided Design) simulation, and we used this data to validate our new model. It also provides validity of the model for program operation in 3D NAND flash memory along with various TCAD analysis data.
引用
收藏
页数：5
相关论文
共 50 条
  • [31] Adaptive Pulse Programming Scheme for Improving the Vth Distribution and Program Performance in 3D NAND Flash Memory
    Du, Zhichao
    Li, Shuang
    Wang, Yu
    Fu, Xiang
    Liu, Fei
    Wang, Qi
    Huo, Zongliang
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 : 102 - 107
  • [32] Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories
    Postel-Pellerin, J.
    Lalande, F.
    Canet, P.
    Bouchakour, R.
    Jeuland, F.
    Bertello, B.
    Villard, B.
    MICROELECTRONICS RELIABILITY, 2009, 49 (9-11) : 1056 - 1059
  • [33] 3D RRAM DESIGN AND BENCHMARK WITH 3D NAND FLASH
    Chen, Pai-Yu
    Xu, Cong
    Xie, Yuan
    Yu, Shimeng
    2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
  • [34] Modeling of program Vth distribution for 3-D TLC NAND flash memory
    Kunliang Wang
    Gang Du
    Zhiyuan Lun
    Wangyong Chen
    Xiaoyan Liu
    Science China Information Sciences, 2019, 62
  • [35] Investigation of Threshold Voltage Distribution Temperature Dependence in 3D NAND Flash
    Zhao, Chenglin
    Jin, Lei
    Li, Da
    Xu, Feng
    Zou, Xingqi
    Zhang, Yu
    Song, Yali
    Wei, Huazheng
    Chen, Yi
    Li, Chunlong
    Huo, Zongliang
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (02) : 204 - 207
  • [36] Modeling of program Vth distribution for 3-D TLC NAND flash memory
    Kunliang WANG
    Gang DU
    Zhiyuan LUN
    Wangyong CHEN
    Xiaoyan LIU
    Science China(Information Sciences), 2019, 62 (04) : 187 - 196
  • [37] A Novel Program Operation Scheme With Negative Bias in 3-D NAND Flash Memory
    Sim, Jae-Min
    Kang, Myounggon
    Song, Yun-Heub
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (12) : 6112 - 6117
  • [38] Modeling of program Vth distribution for 3-D TLC NAND flash memory
    Wang, Kunliang
    Du, Gang
    Lun, Zhiyuan
    Chen, Wangyong
    Liu, Xiaoyan
    SCIENCE CHINA-INFORMATION SCIENCES, 2019, 62 (04)
  • [39] A Compact Model for ISPP of 3-D Charge-Trap NAND Flash Memories
    Kim, Minsoo
    Kim, Sungbak
    Shin, Hyungcheol
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (08) : 3095 - 3101
  • [40] Statistical Analysis of Bit-Errors Distribution for Reliability of 3-D NAND Flash Memories
    Wang, Nian-Jia
    Lee, Kuan-Yi
    Lin, Hsin-Yi
    Hsiao, Wei-Hao
    Lee, Ming-Yi
    Kuo, Li-Kuang
    Lin, Ding-Jhang
    Chao, Yen-Hai
    Lu, Chih-Yuan
    2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2020,
12345