Investigation of Threshold Voltage Distribution Temperature Dependence in 3D NAND Flash

被引:17
|
作者
Zhao, Chenglin [1 ,2 ,3 ]
Jin, Lei [1 ,2 ,3 ]
Li, Da [3 ]
Xu, Feng [3 ]
Zou, Xingqi [1 ,2 ]
Zhang, Yu [1 ,2 ]
Song, Yali [3 ]
Wei, Huazheng [3 ]
Chen, Yi [3 ]
Li, Chunlong [2 ]
Huo, Zongliang [1 ,2 ,3 ]
机构
[1] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[3] Yangtze Memory Technol Co Ltd, Wuhan 430205, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
Temperature dependence; polysilicon; array simulation; Vth distribution; 3D NAND flash; DISTURBANCE; SCHEME;
D O I
10.1109/LED.2018.2886345
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The impact of temperature on array Vth distribution was investigated in 3D NAND flash. Cell Vth distributions were obtained under different program and read temperature splits. After the page is programmed under high temperature, it is found that the high tail of Vth distribution exhibits a larger shift than the low tail, during read at different temperatures (85 degrees C and -25 degrees C). On the contrary, the low tail of Vth distribution shows a larger shift than the high tail during cross temperature read, after the page programmed under low temperature. The temperature coefficient (Tco) of cell Vth shows cell to cell variations, which can be categorized into two types. For type (1), the Tco is correlated with the selected cell Vth due to polysilicon channel. For type (2), the Tco is independent of the selected cell Vth. The corresponding impacts on Vth distribution are studied via array Monte Carlo simulation. Based on the simulation results, the above temperature dependent observations can be well modeled by the combination of both Tco variation type (1) and (2). Furthermore, two optimization approaches are proposed to alleviate the Vth distribution broadening and are validated by experiments.
引用
收藏
页码:204 / 207
页数:4
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