A high-efficiency threshold voltage distribution test method based on the reliability of 3D NAND flash memory

被引:0
|
作者
Wei, Debao [1 ]
Chen, Xiaoyu [1 ]
Feng, Hua [1 ]
Qiao, Liyan [1 ]
Peng, Xiyuan [1 ]
机构
[1] Harbin Inst Technol, 3033,2 Yikuang St, Harbin 150080, Heilongjiang, Peoples R China
基金
中国国家自然科学基金;
关键词
Memory architecture - NAND circuits - Testing - Flash memory;
D O I
10.1016/j.microrel.2020.113897
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With the improvement of manufacturing technology and the use of multi-level technology, the amount of charge stored in a flash memory cell decreases, the number of bits stored in each cell increases, the threshold voltage window becomes smaller. Therefore, it is more vulnerable to external interference to cause the overlap of threshold voltages between adjacent states, which makes it difficult to determine the logical value of cell, resulting in the decline of NAND flash memory reliability. In this paper, we propose an efficient threshold voltage detection method based on READ-OFFSER operation. And using this method to investigate the programming interference of 3D TLC flash memory from the perspective of threshold voltage, it is found that the programming interference between adjacent layers is the most serious.
引用
收藏
页数:6
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