Characterization Summary of Performance, Reliability, and Threshold Voltage Distribution of 3D Charge-Trap NAND Flash Memory

被引:11
|
作者
Liu, Weihua [1 ,2 ]
Wu, Fei [1 ,2 ]
Chen, Xiang [1 ,2 ]
Zhang, Meng [1 ,2 ]
Wang, Yu [1 ,2 ]
Lu, Xiangfeng [3 ]
Xie, Changsheng [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China
[2] Huazhong Univ Sci & Technol, Key Lab Informat Storage Syst, Minist Educ China, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China
[3] Beijing Memblaze Technol Co Ltd, Bldg B2,Dongsheng Pk,66 Xixiaokou Rd, Beijing 100192, Peoples R China
基金
中国国家自然科学基金;
关键词
3D CT NAND flash; performance; reliability; threshold voltage; characterization; READ VOLTAGE;
D O I
10.1145/3491230
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Solid-state drive (SSD) gradually dominates in the high-performance storage scenarios. Three-dimension (3D) NAND flash memory owning high-storage capacity is becoming a mainstream storage component of SSD. However, the interferences of the new 3D charge-trap (CT) NAND flash are getting unprecedentedly complicated, yielding to many problems regarding reliability and performance. Alleviating these problems needs to understand the characteristics of 3D CT NAND flash memory deeply. To facilitate such understanding, in this article, we delve into characterizing the performance, reliability, and threshold voltage (V-th) distribution of 3D CT NAND flash memory. We make a summary of these characteristics with multiple interferences and variations and give several new insights and a characterization methodology. Especially, we characterize the skewed V-th distribution, V-th shift laws, and the exclusive layer variation in 3D NAND flash memory. The characterization is the backbone of designing more reliable and efficient flash-based storage solutions.
引用
收藏
页数:25
相关论文
共 50 条
  • [1] Characterizing the Reliability and Threshold Voltage Shifting of 3D Charge Trap NAND Flash
    Liu, Weihua
    Wu, Fei
    Zhang, Meng
    Wang, Yifei
    Lu, Zhonghai
    Lu, Xiangfeng
    Xie, Changsheng
    [J]. 2019 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE), 2019, : 312 - 315
  • [2] On the Reliability of Charge-Trap (CT) Type Three-dimensional (3D) NAND Flash Memory
    Chen, Jiezhi
    [J]. 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 1212 - 1214
  • [3] Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory
    Wang, Fei
    Li, Yuan
    Ma, Xiaolei
    Chen, Jiezhi
    [J]. IEEE ACCESS, 2021, 9 (09): : 47391 - 47398
  • [4] Modeling of Threshold Voltage Distribution in 3D NAND Flash Memory
    Liu, Weihua
    Wu, Fei
    Zhou, Jian
    Zhang, Meng
    Yang, Chengmo
    Lu, Zhonghai
    Wang, Yu
    Xie, Changsheng
    [J]. PROCEEDINGS OF THE 2021 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE 2021), 2021, : 1729 - 1732
  • [5] Experimental characterizations on TID Radiation Impacts in Charge-trap 3D NAND Flash Memory
    Hu, Hongyang
    Feng, Yang
    Zhan, Xuepeng
    Xi, Kai
    Ji, Lanlong
    Chen, Jiezhi
    Liu, Jing
    [J]. 2021 SILICON NANOELECTRONICS WORKSHOP (SNW), 2021, : 35 - 36
  • [6] A Progressive Performance Boosting Strategy for 3-D Charge-Trap NAND Flash
    Chen, Shuo-Han
    Chen, Yen-Ting
    Chang, Yuan-Hao
    Wei, Hsin-Wen
    Shih, Wei-Kuan
    [J]. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2018, 26 (11) : 2322 - 2334
  • [7] Nimble Mapping SSD: Leaning State Mapping Strategy to Increase Reliability of 3D TLC Charge-Trap NAND Flash Memory
    Chen, Chih-Chia
    Hsieh, Jen-Wei
    [J]. 2022 IEEE 11TH NON-VOLATILE MEMORY SYSTEMS AND APPLICATIONS SYMPOSIUM (NVMSA 2022), 2022, : 57 - 62
  • [8] Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory
    Go, Donghyun
    Yoon, Gilsang
    Park, Jounghun
    Kim, Donghwi
    Kim, Jiwon
    Kim, Jungsik
    Lee, Jeong-Soo
    [J]. MICROMACHINES, 2023, 14 (11)
  • [9] Research on 3D TLC NAND flash reliability from the perspective of threshold voltage distribution
    Wei, Debao
    Feng, Hua
    Chen, Xiaoyu
    Qiao, Liyan
    Peng, Xiyuan
    [J]. MICROELECTRONICS RELIABILITY, 2020, 114 (114)
  • [10] Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories
    Chen, Fei
    Chen, Bo
    Lin, Hongzhe
    Kong, Yachen
    Liu, Xin
    Zhan, Xuepeng
    Chen, Jiezhi
    [J]. MICROMACHINES, 2021, 12 (10)