共 50 条
- [1] Characterizing the Reliability and Threshold Voltage Shifting of 3D Charge Trap NAND Flash [J]. 2019 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE), 2019, : 312 - 315
- [2] On the Reliability of Charge-Trap (CT) Type Three-dimensional (3D) NAND Flash Memory [J]. 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 1212 - 1214
- [3] Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory [J]. IEEE ACCESS, 2021, 9 (09): : 47391 - 47398
- [4] Modeling of Threshold Voltage Distribution in 3D NAND Flash Memory [J]. PROCEEDINGS OF THE 2021 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE 2021), 2021, : 1729 - 1732
- [5] Experimental characterizations on TID Radiation Impacts in Charge-trap 3D NAND Flash Memory [J]. 2021 SILICON NANOELECTRONICS WORKSHOP (SNW), 2021, : 35 - 36
- [7] Nimble Mapping SSD: Leaning State Mapping Strategy to Increase Reliability of 3D TLC Charge-Trap NAND Flash Memory [J]. 2022 IEEE 11TH NON-VOLATILE MEMORY SYSTEMS AND APPLICATIONS SYMPOSIUM (NVMSA 2022), 2022, : 57 - 62