Comparison of the growth characteristics of SiC on Si between low-pressure CVD and triode plasma CVD

被引：5

作者：

Yasui, K ^{[1
]}

Hashiba, M ^{[1
]}

Narita, Y ^{[1
]}

Akahane, T ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Dept Elect Engn, Nagaoka, Niigata 9402188, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

3C-SiC; dimethysilane; low-pressure CVD; triode plasma CVD;

D O I：

10.4028/www.scientific.net/MSF.389-393.367

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to investigate the effect of the supply of hydrogen radicals during the SiC growth, SiC films were grown on Si substrates by low-pressure thermal CVD (LPCVD) and triode plasma CVD using dimethylsilane (DMS). Activation energy for the epitaxial growth rate of SiC by LPCVD was estimated to be 73+/-5kcal/mol, whereas that by triode plasma CVD was about 48+/-2kcal/mol. As in the case of the growth rate of SiC using monomethylsilane (MMS), the activation energy by using the triode plasma CVD was reduced about 25kcal/mol in the case of DMS.

引用

页码：367 / 370

页数：4

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