Comparison of the growth characteristics of SiC on Si between low-pressure CVD and triode plasma CVD

In order to investigate the effect of the supply of hydrogen radicals during the SiC growth, SiC films were grown on Si substrates by low-pressure thermal CVD (LPCVD) and triode plasma CVD using dimethylsilane (DMS). Activation energy for the epitaxial growth rate of SiC by LPCVD was estimated to be 73+/-5kcal/mol, whereas that by triode plasma CVD was about 48+/-2kcal/mol. As in the case of the growth rate of SiC using monomethylsilane (MMS), the activation energy by using the triode plasma CVD was reduced about 25kcal/mol in the case of DMS.