Comparison of the growth characteristics of SiC on Si between low-pressure CVD and triode plasma CVD

被引：5

作者：

Yasui, K ^{[1
]}

Hashiba, M ^{[1
]}

Narita, Y ^{[1
]}

Akahane, T ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Dept Elect Engn, Nagaoka, Niigata 9402188, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

3C-SiC; dimethysilane; low-pressure CVD; triode plasma CVD;

D O I：

10.4028/www.scientific.net/MSF.389-393.367

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to investigate the effect of the supply of hydrogen radicals during the SiC growth, SiC films were grown on Si substrates by low-pressure thermal CVD (LPCVD) and triode plasma CVD using dimethylsilane (DMS). Activation energy for the epitaxial growth rate of SiC by LPCVD was estimated to be 73+/-5kcal/mol, whereas that by triode plasma CVD was about 48+/-2kcal/mol. As in the case of the growth rate of SiC using monomethylsilane (MMS), the activation energy by using the triode plasma CVD was reduced about 25kcal/mol in the case of DMS.

引用

页码：367 / 370

页数：4

共 50 条

[41] Growth of SiC on Si(100) by low-pressure MOVPE
Bakin, AS
Ivanov, AA
Piester, D
Riedl, T
Hitzel, F
Wehmann, HH
Schlachetzki, A
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 163 - 166
[42] In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD
Ohnishi, T.
Kirihata, Y.
Ohmi, H.
Kakiuchi, H.
Yasutake, K.
EUROCVD 17 / CVD 17, 2009, 25 (08): : 309 - 315
[43] High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD
Yasutake, K.
Ohmi, H.
Kirihata, Y.
Kakiuchi, H.
THIN SOLID FILMS, 2008, 517 (01) : 242 - 244
[44] Plasma enhanced CVD of fluorocarbon films by low-pressure dielectric barrier discharge
Liu, Dongping
Li, Wei
Feng, Zhiqing
Tan, Xiaodong
Chen, Baoxiang
Niu, Jinhai
Liu, Yanhong
SURFACE & COATINGS TECHNOLOGY, 2009, 203 (09): : 1231 - 1236
[45] THIN-FILM PREPARATION BY PLASMA AND LOW-PRESSURE CVD IN A HORIZONTAL REACTOR
MOROSANU, CE
SOLTUZ, V
VACUUM, 1981, 31 (07) : 309 - 313
[46] SILICON-NITRIDE DEPOSITION BY PLASMA ENHANCED LOW-PRESSURE CVD TECHNIQUE
SEQUEDA, F
RICHARDSON, RE
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 362 - 363
[47] BORON COMPOUND PROTECTIVE COATINGS PREPARED BY MEANS OF LOW-PRESSURE PLASMA CVD
BRAGANZA, C
VEPREK, S
GRONER, P
JOURNAL OF NUCLEAR MATERIALS, 1979, 85-6 (DEC) : 1133 - 1137
[48] Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(100) by ultraclean low-pressure CVD system
Tanno, Hiroki
Sakuraba, Masao
Tillack, Bernd
Murota, Junichi
SOLID-STATE ELECTRONICS, 2009, 53 (08) : 877 - 879
[49] Growth of columnar Sic on patterned Si substrates by CVD
Nishino, S
Okui, Y
Tai, Y
Jacob, C
SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES, 2003, 742 : 59 - 64
[50] TRANSMISSION ELECTRON MICROSCOPY INVESTIGATIONS OF LOW-PRESSURE CVD GROWTH AND STRAIN RELAXATION OF Ge ISLANDS ON Si(110)
E. Spiecker
W. Jger
L. Vescan
Acta Metallurgica Sinica(English Letters), 2005, (03) : 427 - 432

← 1 2 3 4 5 →