Growth of SiC on Si(100) by low-pressure MOVPE

3C-SiC was grown on Si(100) using a metal-organic vapour phase epitaxy set-up at temperatures well below 1000°C (mostly at 940°C). A UV-source has been added to the set-up. Carbon tetrabromide (CBr4) was used as the carbon source. The implementation of UV stimulation during the growth process leads to a higher uniformity of the grown surfaces and in most cases to a lower roughness compared to the growth under the same conditions but without UV stimulation. An additional effect is an increased density of self-organized nano-islands. The results of our recent investigations concerning the growth as well as the growth of initial nano-scale islands are described and discussed in the present paper.