Direct growth of GaN on (0001) 6H-SiC by low-pressure MOVPE with a flow channel

被引：15

作者：

Kurimoto, M ^{[1
]}

Shibata, M ^{[1
]}

Yamamoto, J ^{[1
]}

Tsubamoto, M ^{[1
]}

Honda, T ^{[1
]}

Kawanishi, H ^{[1
]}

机构：

[1] Kohgakuin Univ, Dept Elect Engn, Hachiohji, Tokyo 1920015, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

D O I：

10.1016/S0022-0248(98)00201-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Direct growth of a GaN layer on (0 0 0 1) 6H-SiC by low-pressure MOVFE (LP-MOVPE) with a flow channel is investigated. In this study, we have reported that the surface morphologies of GaN epitaxial layer depend on the gas flow velocity. A high flow velocity is required for a two-dimensional(2D) growth. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

引用

页码：189 / 192

页数：4

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