Direct growth of GaN on (0001) 6H-SiC by low-pressure MOVPE with a flow channel

被引：15
|
作者：
Kurimoto, M [1 ]
Shibata, M [1 ]
Yamamoto, J [1 ]
Tsubamoto, M [1 ]
Honda, T [1 ]
Kawanishi, H [1 ]
机构：
[1] Kohgakuin Univ, Dept Elect Engn, Hachiohji, Tokyo 1920015, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷
关键词：
D O I：
10.1016/S0022-0248(98)00201-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Direct growth of a GaN layer on (0 0 0 1) 6H-SiC by low-pressure MOVFE (LP-MOVPE) with a flow channel is investigated. In this study, we have reported that the surface morphologies of GaN epitaxial layer depend on the gas flow velocity. A high flow velocity is required for a two-dimensional(2D) growth. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：189 / 192
页数：4
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