共 50 条
- [21] 6H to 3C polytype transformation in silicon carbide JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (1AB): : L27 - L29
- [23] Evidence for phosphorus on carbon and silicon sites in 6H and 4H SiC Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 585 - 588
- [24] A complex defect related to the carbon vacancy in 4H and 6H SiC PHYSICA SCRIPTA, 1999, T79 : 46 - 49
- [25] Comparative growth of AlN on singular and off-axis 6H and 4H-SiC by MOCVD MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 : art. no. - G3.61
- [27] Polytype stability of 4H-SiC seed crystal on solution growth SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 24 - 27
- [28] The effect of thermal annealing of Au contacts on 6H-SiC and 4H-SiC WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 375 - 380
- [30] Neutral silicon vacancy in 6H and 4H SiC Materials Science Forum, 1998, 264-268 (pt 1): : 473 - 476