Effect of carbon fiber volume fraction on 6H to 4H-SiC polytype transformation

被引:4
|
作者
Moslemi, Mahboubeh [1 ]
Razavi, Mansour [1 ]
Zakeri, Mohammad [1 ]
Rahimipour, Mohammad Reza [1 ]
Schreiner, Marcus [2 ]
机构
[1] Mat & Energy Res Ctr, Dept Ceram, Karaj, Iran
[2] TU Bergakad Freiberg, Inst Energy Proc Engn & Chem Engn, Freiberg, Germany
关键词
alpha-SiC; spark plasma sintering; polytype transformation; Rietveld; SILICON-CARBIDE CERAMICS; REINFORCED SIC COMPOSITES; MECHANICAL-PROPERTIES; INFILTRATION; MICROSTRUCTURE; FABRICATION; ADDITIVES; POWDERS;
D O I
10.1080/01411594.2018.1481214
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In this study, polycrystalline -SiC composed of 55.7wt.% 6H-SiC, 35.1wt.% 4H-SiC with different volume fractions of carbon fibers (0-5-10-15-20%) was successfully sintered by spark plasma sintering technique at 2000 degrees C and 35MPa of applied pressure. The micrographs obtained from scanning electron microscopy revealed that the sintered samples were composed of equiaxed SiC grains. Results indicated that the presence of carbon fibers retarded the SiC densification process, decreased their relative densities and increased their porosity. Additionally, according to quantitative phase analysis by the Rietveld method during the sintering step, it was found that the 6H to 4H transformation has taken place. Increasing the carbon fibers content accelerated this trend as the sample containing 20vol.% carbon fiber was consisted of 85.5wt.% 4H-SiC.
引用
收藏
页码:733 / 741
页数:9
相关论文
共 50 条
  • [31] The acceptor level for vanadium in 4H and 6H SiC
    Zvanut, ME
    Lee, W
    Mitchel, WC
    Mitchell, WD
    Landis, G
    PHYSICA B-CONDENSED MATTER, 2006, 376 : 346 - 349
  • [32] Polytype switching identification in 4H-SiC single crystal grown by PVT
    Arora, Aman
    Pandey, Akhilesh
    Patel, Ankit
    Dalal, Sandeep
    Yadav, Brajesh S.
    Goyal, Anshu
    Raman, R.
    Thakur, O. P.
    Tyagi, Renu
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (19) : 16343 - 16351
  • [33] Study on surface morphology and polytype transition of 4H-SiC single crystals
    Peng, Yan
    Ning, Li-Na
    Gao, Yu-Qiang
    Xu, Hua-Yong
    Song, Sheng
    Jiang, Kai
    Hu, Xiao-Bo
    Xu, Xian-Gang
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2010, 39 (03): : 559 - 563
  • [34] The neutral silicon vacancy in 6H and 4H SiC
    Sorman, E
    Chen, WM
    Son, NT
    Hallin, C
    Lindstrom, JL
    Monemar, B
    Janzen, E
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 473 - 476
  • [35] Homoepitaxy 6H and 4H SiC on nonplanar substrates
    Nordell, N
    Karlsson, S
    Konstantinov, AO
    APPLIED PHYSICS LETTERS, 1998, 72 (02) : 197 - 199
  • [36] Polytype switching identification in 4H-SiC single crystal grown by PVT
    Aman Arora
    Akhilesh Pandey
    Ankit Patel
    Sandeep Dalal
    Brajesh S. Yadav
    Anshu Goyal
    R. Raman
    O. P. Thakur
    Renu Tyagi
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 16343 - 16351
  • [37] Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT
    Schmitt, Erwin
    Straubinger, Thomas
    Rasp, Michael
    Vogel, Michael
    Wohlfart, Andreas
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 11 - 14
  • [38] Microhardness of 6H-and 4H-SiC Substrates
    Eddy, C. R., Jr.
    Wu, P.
    Zwieback, I.
    VanMil, B. L.
    Myers-Ward, R. L.
    Tedesco, J. L.
    Souzis, A. E.
    Gaskill, D. K.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 323 - 326
  • [39] Space Charge Waves in 6H-SiC and 4H-SiC
    Lebedev, A. A.
    Lemmer, M.
    Hilling, B.
    Wohlecke, M.
    Imlau, M.
    Bryksin, V. V.
    Petrov, M. P.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 537 - +
  • [40] Effect of NO annealing on 6H-and 4H-SiC MOS interface states
    Basile, A. F.
    Rozen, J.
    Chen, X. D.
    Dhar, S.
    Williams, J. R.
    Feldman, L. C.
    Mooney, P. M.
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 499 - +