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Magnetization switching assisted by high-frequency-voltage-induced ferromagnetic resonance
被引:28
|作者:
Nozaki, Takayuki
[1
,2
]
Arai, Hiroko
[1
]
Yakushiji, Kay
[1
,2
]
Tamaru, Shingo
[1
]
Kubota, Hitoshi
[1
,2
]
Imamura, Hiroshi
[1
]
Fukushima, Akio
[1
,2
]
Yuasa, Shinji
[1
,2
]
机构:
[1] Spintron Res Ctr, Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[2] JST, CREST, Kawaguchi, Saitama 3320012, Japan
关键词:
ATOMIC LAYERS;
D O I:
10.7567/APEX.7.073002
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Magnetization switching assisted by high-frequency voltage was demonstrated in magnetic tunnel junctions with perpendicular magnetization. Ferromagnetic resonance was excited by high-frequency voltage instead of by a high-frequency magnetic field. A frequency-dependent reduction, in the switching field (coercive force) was clearly observed with a maximum reduction rate of more than 80% under a radio-frequency power application of 3 dBm. The developed technique can provide a novel approach to energy-assisted magnetization switching with low ohmic dissipation. (C) 2014 The Japan Society of Applied Physics
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页数:4
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