Magnetization switching assisted by high-frequency-voltage-induced ferromagnetic resonance

被引：28

作者：

Nozaki, Takayuki ^{[1
,2
]}

Arai, Hiroko ^{[1
]}

Yakushiji, Kay ^{[1
,2
]}

Tamaru, Shingo ^{[1
]}

Kubota, Hitoshi ^{[1
,2
]}

Imamura, Hiroshi ^{[1
]}

Fukushima, Akio ^{[1
,2
]}

Yuasa, Shinji ^{[1
,2
]}

机构：

[1] Spintron Res Ctr, Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] JST, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 07期

关键词：

ATOMIC LAYERS;

D O I：

10.7567/APEX.7.073002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetization switching assisted by high-frequency voltage was demonstrated in magnetic tunnel junctions with perpendicular magnetization. Ferromagnetic resonance was excited by high-frequency voltage instead of by a high-frequency magnetic field. A frequency-dependent reduction, in the switching field (coercive force) was clearly observed with a maximum reduction rate of more than 80% under a radio-frequency power application of 3 dBm. The developed technique can provide a novel approach to energy-assisted magnetization switching with low ohmic dissipation. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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