High-Frequency Switching of SiC High-Voltage LJFET

被引：25
|
作者：
Sheng, Kuang [1 ]
Zhang, Yongxi [1 ]
Yu, Lianochun [1 ]
Su, Ming [1 ]
Zhao, Jian H. [1 ]
机构：
[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2009年 / 24卷 / 1-2期
关键词：
High frequency; JFET; power ICs; silicon carbide (SiC);
D O I：
10.1109/TPEL.2008.2005984
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, inductive-load switching of a high-voltage lateral JFET (HV-LJFET) on 4H-SiC is investigated with a monolithically integrated driver and with an external driver for high-frequency, high-temperature applications. A new "capacitor-coupled" gate driver circuitry is proposed and optimized to utilize a standard MOS driver and enable fast switching speed without the need for a negative power supply. Switching times and losses of the silicon carbide (SiC) HV-LJFET are characterized under various driver conditions and device temperatures. The results reveal that the temperature-independent, high switching speed of the Sic LJFET makes it possible to hard-switch at 3 MHz, 200 V, 1.2 A, and 250 degrees C with good efficiency, significantly higher than silicon devices with similar voltage ratings.
引用
收藏
页码：271 / 277
页数：7
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