High frequency switching of SiC high voltage LJFET

被引：0
|
作者：
Sheng, Kuang [1 ]
Zhang, Yongxi [1 ]
Su, Ming [1 ]
Yu, Liangchun [1 ]
Zhao, Jian H. [1 ]
机构：
[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA
来源：
ISPSD 08: PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2008年
关键词：
junction field-effect transistor (JFET); silicon carbide (SiC); power integrated circuits; high frequency;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, inductive-load switching of a high voltage lateral JFET (HV-LJFET) on 4H-SiC is investigated with a monolithically integrated driver and with an external driver for high frequency, high temperature applications. A new 'capacitor-coupled' gate driver circuitry is proposed and optimized to utilize a standard MOS driver and enable fast switching speed without the need for a negative power supply. Switching times and losses of the SiC HV-LJFET are characterized under various driver conditions and device temperatures. The results reveal that the temperature-independent, high switching speed of the SiC LJFET makes it possible to hard-switch at 3MHz, 200V, 1.2A and 250 degrees C with good efficiency, significantly higher than silicon devices with similar voltage ratings.
引用
收藏
页码：229 / 232
页数：4
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