SiC and GaN high-voltage power switching devices

被引：29
|
作者：
Chow, TP [1 ]
机构：
[1] Rensselaer Polytech Inst, Troy, NY 12180 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷
关键词：
GaN; SIG; switching devices;
D O I：
10.4028/www.scientific.net/MSF.338-342.1155
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The present status of high-voltage SIC and GaN power semiconductor switching devices is reviewed. The choice and design of several key device structures are discussed. The performance expectations of the major two- and three-terminal unipolar and bipolar devices in SiC and GaN are presented and compared. The progress in high-voltage power device experimental demonstration is reviewed. The material and process technology issues that need to be addressed for device commercialization are discussed.
引用
收藏
页码：1155 / 1160
页数：6
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