SiC and GaN high-voltage power switching devices

被引：29

作者：

Chow, TP ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Troy, NY 12180 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

GaN; SIG; switching devices;

D O I：

10.4028/www.scientific.net/MSF.338-342.1155

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present status of high-voltage SIC and GaN power semiconductor switching devices is reviewed. The choice and design of several key device structures are discussed. The performance expectations of the major two- and three-terminal unipolar and bipolar devices in SiC and GaN are presented and compared. The progress in high-voltage power device experimental demonstration is reviewed. The material and process technology issues that need to be addressed for device commercialization are discussed.

引用

页码：1155 / 1160

页数：6

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