High-voltage SiC and GaN power devices

被引：47
|
作者：
Chow, TP [1 ]
机构：
[1] Rensselaer Polytech Inst, Troy, NY 12180 USA
来源：
MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 01期
关键词：
silicon carbide; gallium nitride; power semiconductor devices; new devices;
D O I：
10.1016/j.mee.2005.10.057
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The recent progress in the development of high-voltage SiC and GaN power switching devices is reviewed. The experimental performance of various rectifiers and transistors, which have been demonstrated, is discussed. Material and processing challenges and reliability concerns on SiC and GaN power devices are also described. The future trends in device development and commercialization are pointed out. (c) 2005 Published by Elsevier B.V.
引用
收藏
页码：112 / 122
页数：11
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