High-voltage SiC and GaN power devices

被引：0
|
作者：
Chow, TP [1 ]
机构：
[1] Rensselaer Polytech Inst, Troy, NY 12180 USA
来源：
PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2004年
关键词：
D O I：
10.1109/BIPOL.2004.1365779
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wide bandgap semiconductors, particularly SiC and GaN, have recently attracted much attention for power electronics applications because they are projected to have more than 100 times better performance than silicon. In this paper, we will review the recent progress in SiC and GaN high-voltage power switching device demonstrations.
引用
收藏
页码：198 / 200
页数：3
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