Epitaxial growth and defect control of SiC for high-voltage power devices

被引：1
|
作者：
Kimoto, Tsunenobu [1 ]
Suda, Jun [1 ]
机构：
[1] Department of Electronic Science and Engineering, Kyoto University, Al-301, Katsura, Nishikyo, Kyoto 615-8510, Japan
来源：
Journal of the Vacuum Society of Japan | 2011年 / 54卷 / 06期
关键词：
Basal plane dislocations - Fast epitaxial growths - High growth rate - High voltage power - Low energy electron irradiation - Silicon carbides (SiC) - Thermal oxidation - Threading edge dislocation;
D O I：
10.3131/jvsj2.54.362
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：362 / 368
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