Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure
被引:2
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作者:
Cai, Kaiming
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机构:
Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
Cai, Kaiming
[1
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Yang, Meiyin
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机构:
Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
Yang, Meiyin
[1
]
Ju, Hailang
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机构:
Beijing Technol & Business Univ, Sch Sci, Dept Phys, Beijing 100048, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
Ju, Hailang
[2
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Wang, Sumei
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机构:
Univ Chinese Acad Sci, Inst Microelect CAS, ICAC, Beijing 100029, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
Wang, Sumei
[3
]
Ji, Yang
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Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
Ji, Yang
[1
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Li, Baohe
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机构:
Beijing Technol & Business Univ, Sch Sci, Dept Phys, Beijing 100048, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
Li, Baohe
[2
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Edmonds, Kevin William
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机构:
Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, EnglandChinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
Edmonds, Kevin William
[4
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Sheng, Yu
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Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
Sheng, Yu
[1
]
Zhang, Bao
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机构:
Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
Zhang, Bao
[1
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Zhang, Nan
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Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
Zhang, Nan
[1
]
Liu, Shuai
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机构:
Beijing Technol & Business Univ, Sch Sci, Dept Phys, Beijing 100048, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
Liu, Shuai
[2
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Zheng, Houzhi
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机构:
Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
Zheng, Houzhi
[1
]
Wang, Kaiyou
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机构:
Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
Wang, Kaiyou
[1
]
机构:
[1] Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China
[2] Beijing Technol & Business Univ, Sch Sci, Dept Phys, Beijing 100048, Peoples R China
[3] Univ Chinese Acad Sci, Inst Microelect CAS, ICAC, Beijing 100029, Peoples R China
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology(1-3). Methods based on the spin-orbit torque switching(4-6) in heavy metal/ferromagnet structures have been proposed with magnetic field(7-15), and are heading toward deterministic switching without external magnetic field(16,17). Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in ahybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate. The effective magnetic field can be reversed by changing the direction of the applied electric field on the PMN-PT substrate, which fully replaces the controllability function of the external magnetic field. The electric field is found to generate an additional spin-orbit torque on the CoNiCo magnets, which is confirmed by macrospin calculations and micromagnetic simulations.
机构:
SKLSM, Institute of Semiconductors, CAS, PO Box 912, BeijingSKLSM, Institute of Semiconductors, CAS, PO Box 912, Beijing
Cai K.
Yang M.
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机构:
SKLSM, Institute of Semiconductors, CAS, PO Box 912, BeijingSKLSM, Institute of Semiconductors, CAS, PO Box 912, Beijing
Yang M.
Ju H.
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机构:
Department of Physics, School of Sciences, Beijing Technology and Business University, BeijingSKLSM, Institute of Semiconductors, CAS, PO Box 912, Beijing
Ju H.
Wang S.
论文数: 0引用数: 0
h-index: 0
机构:
ICAC, Institute of Microelectronics of CAS, University of Chinese Academy of Sciences, BeijingSKLSM, Institute of Semiconductors, CAS, PO Box 912, Beijing
Wang S.
Ji Y.
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h-index: 0
机构:
SKLSM, Institute of Semiconductors, CAS, PO Box 912, BeijingSKLSM, Institute of Semiconductors, CAS, PO Box 912, Beijing
Ji Y.
Li B.
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机构:
Department of Physics, School of Sciences, Beijing Technology and Business University, BeijingSKLSM, Institute of Semiconductors, CAS, PO Box 912, Beijing
Li B.
论文数: 引用数:
h-index:
机构:
Edmonds K.W.
Sheng Y.
论文数: 0引用数: 0
h-index: 0
机构:
SKLSM, Institute of Semiconductors, CAS, PO Box 912, BeijingSKLSM, Institute of Semiconductors, CAS, PO Box 912, Beijing
Sheng Y.
Zhang B.
论文数: 0引用数: 0
h-index: 0
机构:
SKLSM, Institute of Semiconductors, CAS, PO Box 912, BeijingSKLSM, Institute of Semiconductors, CAS, PO Box 912, Beijing
Zhang B.
Zhang N.
论文数: 0引用数: 0
h-index: 0
机构:
SKLSM, Institute of Semiconductors, CAS, PO Box 912, BeijingSKLSM, Institute of Semiconductors, CAS, PO Box 912, Beijing
Zhang N.
Liu S.
论文数: 0引用数: 0
h-index: 0
机构:
Department of Physics, School of Sciences, Beijing Technology and Business University, BeijingSKLSM, Institute of Semiconductors, CAS, PO Box 912, Beijing
Liu S.
Zheng H.
论文数: 0引用数: 0
h-index: 0
机构:
SKLSM, Institute of Semiconductors, CAS, PO Box 912, BeijingSKLSM, Institute of Semiconductors, CAS, PO Box 912, Beijing
Zheng H.
Wang K.
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机构:
SKLSM, Institute of Semiconductors, CAS, PO Box 912, BeijingSKLSM, Institute of Semiconductors, CAS, PO Box 912, Beijing
机构:
Univ Paris 11, CNRS, UMR8502, Phys Solides Lab, F-91405 Orsay, FranceUniv Paris 11, CNRS, UMR8502, Phys Solides Lab, F-91405 Orsay, France
Gorchon, J.
Curiale, J.
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机构:
Univ Paris 11, CNRS, UMR8502, Phys Solides Lab, F-91405 Orsay, France
CNRS, UPR 20, Lab Photon & Nanostruct, F-91460 Marcoussis, France
Comis Nacl Energia Atom, Ctr Atom Bariloche, Consejo Nacl Invest Cient & Tecn, RA-8400 San Carlos De Bariloche, Rio Negro, ArgentinaUniv Paris 11, CNRS, UMR8502, Phys Solides Lab, F-91405 Orsay, France
机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South KoreaKorea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
Seo, Soo-Man
Lee, Kyung-Jin
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机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
NIST, Ctr Nanoscale Sci & Technol, Gaithersburg, MD 20899 USA
Univ Maryland, Maryland Nanoctr, College Pk, MD 20742 USAKorea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
机构:
Univ Sci & Technol Beijing, Dept Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R ChinaUniv Sci & Technol Beijing, Dept Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China
Bao Jin
Xu Xiao-Guang
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机构:
Univ Sci & Technol Beijing, Dept Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R ChinaUniv Sci & Technol Beijing, Dept Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China
Xu Xiao-Guang
Jiang Yong
论文数: 0引用数: 0
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机构:
Univ Sci & Technol Beijing, Dept Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R ChinaUniv Sci & Technol Beijing, Dept Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China