Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)

被引：24

作者：

Tokarczyk, M. ^{[1
]}

Kowalski, G. ^{[1
]}

Mozdzonek, M. ^{[2
]}

Borysiuk, J. ^{[1
,3
]}

Stepniewski, R. ^{[1
]}

Strupinski, W. ^{[2
]}

Ciepielewski, P. ^{[2
]}

Baranowski, J. M. ^{[1
,2
]}

机构：

[1] Univ Warsaw, Fac Phys, PL-00681 Warsaw, Poland

[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[3] Polish Acad Sci, Inst Phys, Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 24期

关键词：

X-RAY-DIFFRACTION; GRAPHITE; BILAYER; SCATTERING; NANOSHEETS; SURFACE;

D O I：

10.1063/1.4848815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural investigations of hydrogenated epitaxial graphene grown on SiC(0001) are presented. It is shown that hydrogen plays a dual role. In addition to contributing to the well-known removal of the buffer layer, it goes between the graphene planes, resulting in an increase of the interlayer spacing to 3.6 angstrom-3.8 angstrom. It is explained by the intercalation of molecular hydrogen between carbon planes, which is followed by H-2 dissociation, resulting in negatively charged hydrogen atoms trapped between the graphene layers, with some addition of covalent bonding to carbon atoms. Negatively charged hydrogen may be responsible for p-doping observed in hydrogenated multilayer graphene. (C) 2013 AIP Publishing LLC.

引用

页数：5

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