Microscopic Raman Mapping of Epitaxial Graphene on 4H-SiC(0001)

被引：10

作者：

Ryong-Sok, O. ^{[1
]}

Iwamoto, Atsushi ^{[1
]}

Nishi, Yuki ^{[1
]}

Funase, Yuya ^{[1
]}

Yuasa, Takahiro ^{[1
]}

Tomita, Takuro ^{[1
]}

Nagase, Masao ^{[1
]}

Hibino, Hiroki ^{[2
]}

Yamaguchi, Hiroshi ^{[2
]}

机构：

[1] Univ Tokushima, Grad Sch Adv Technol & Sci, Tokushima 7708506, Japan

[2] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 06期

关键词：

D O I：

10.1143/JJAP.51.06FD06

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a quality control method for wafer-scale epitaxial graphene grown on SiC substrates. The peak position of Raman spectra of epitaxial graphene is an excellent indicator of film quality and reveals irregularities, such as graphene thickness inhomogeneity and SiC substrate defects. A comparison of microscopic Raman maps and scanning probe microscopy images of the same position of the sample revealed that wave numbers of Raman peaks (G and 2D band peaks) were strongly correlated with the strain in the graphene film. The increase in number of graphene layers (2 to 3-4 layers) induced phonon softening (similar to 6 cm(-1)) and broadening (similar to 6 cm(-1)) of the 2D band peak. Significant phonon softening and abnormal broadening of the Raman peaks were observed at residual scratches on the SiC substrate. The quantitative layer number distribution of graphene on SiC is successfully estimated from the wave number distribution of the 2D band peak. (C) 2012 The Japan Society of Applied Physics

引用

页数：5

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