Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001)

被引：7

作者：

Velez-Fort, E. ^{[1
,2
]}

Ouerghi, A. ^{[1
]}

Silly, M. G. ^{[3
]}

Eddrief, M. ^{[4
,5
]}

Shukla, A. ^{[2
]}

Sirtti, F. ^{[3
]}

Marangolo, M. ^{[4
,5
]}

机构：

[1] CNRS, LPN, F-91460 Marcoussis, France

[2] Sorbonne Univ Pierre & Marie Curie, CNRS, UMR7590, Inst Mineral & Phys Milieux Condenses, F-75005 Paris, France

[3] Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France

[4] CNRS, UMR 7588, Inst NanoSci Paris INSP, F-75005 Paris, France

[5] Univ Paris 06, Sorbonne Univ, UMR 7588, INSP, F-75005 Paris, France

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 09期

关键词：

SILICON-CARBIDE; DOPED GRAPHENE; GRAPHITE OXIDE; GAS; OXYGEN;

D O I：

10.1063/1.4867348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural and electronic properties of epitaxial graphene on 4H-SiC were studied before and after an atomic oxidation process. X-ray photoemission spectroscopy indicates that oxygen penetrates into the substrate and decouples a part of the interface layer. Raman spectroscopy demonstrates the increase of defects due to the presence of oxygen. Interestingly, we observed on the near edge x-ray absorption fine structure spectra a splitting of the pi* peak into two distinct resonances centered at 284.7 and 285.2 eV. This double structure smears out after the oxidation process and permits to probe the interface architecture between graphene and the substrate. (C) 2014 AIP Publishing LLC.

引用

页数：4

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